![]() 47, 633 (2016)Ĭhwang, A.B., Rothman, M.A., Mao, S.Y., Hewitt, R.H., Weaver, M.S., Silvernail, J.A., Rajan, K., Hack, M., Brown, J.J., Chu, X.: Thin film encapsulated flexible organic electroluminescent displays. IEEE 100, 1486 (2012)įujisaki, Y., Nakata, M., Nakajima, Y., Tsuji, H., Miyakawa, M., Motomura, G., Fukagawa, H., Shimizu, T., Tsuzuki, T., Takei, T., Yamamoto, T.: Oxide/organic semiconductor electronics on plastic substrates for flexible AMOLED displays. ![]() Nathan, A., Ahnood, A., Cole, M.T., Lee, S., Suzuki, Y., Hiralal, P., Bonaccorso, F., Hasan, T., Garcia-Gancedo, L., Dyadyusha, A.: Flexible electronics: the next ubiquitous platform. Hence, the analysis and control of hydrogen flux is crucial to maintaining good device performance and stability of a-IGZO TFTs. Hydrogen concentration is 5% lower in devices on a PI substrate after annealing, which increases the hysteresis characteristics from 0.22 to 0.55 V and also the threshold voltage shift under positive bias temperature stress by 2 × compared to the devices on a glass substrate. The influence of hydrogen varies between the TFTs fabricated on a glass substrate to those on a PI substrate. ![]() Hydrogen increases the carrier concentration in the active layer, but it also electrically deactivates intrinsic defects depending on its concentration. In this study, we investigate how the polyimide (PI) substrate affects hydrogen concentration in the a-IGZO layer, which subsequently influences the device performance and stability under bias-temperature-stress. Previous studies have reported on the mechanical robustness and chemical stability of flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on plastic substrates both in flat and curved states.
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